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What is electric current at the level of moving charge carriers?

Current as the rate of flow of charge, the equation I = nAve linking current to charge-carrier density and drift velocity, and conductors, semiconductors and insulators.

A focused answer to WJEC A-Level Physics Unit 2 conduction of electricity, covering current as the rate of flow of charge, the equation I = nAve linking current to charge-carrier number density and drift velocity, and the difference between conductors, semiconductors and insulators.

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  1. What this dot point is asking
  2. The answer
  3. Examples in context
  4. Try this

What this dot point is asking

WJEC wants you to define current as the rate of flow of charge, use the equation I=nAveI = nAve, and explain conduction in conductors, semiconductors and insulators in terms of charge-carrier number density. The I=nAveI = nAve model is the bridge between the everyday idea of current and what the electrons are actually doing, and the examiners love it because it ties a microscopic picture to a measurable quantity.

The answer

Current as flow of charge

By convention, current is the direction in which positive charge would flow, which is opposite to the actual motion of the electrons in a metal.

The equation I = nAve

Here nn is the number density of charge carriers (per cubic metre), AA is the cross-sectional area, vv is the mean drift velocity and ee is the charge on each carrier. The equation is derived by counting carriers: in a time Δt\Delta t the carriers sweep through a volume AvΔtAv\Delta t, containing nAvΔtnAv\Delta t carriers, each of charge ee, so the charge passing is ΔQ=nAveΔt\Delta Q = nAve\Delta t and I=ΔQ/Δt=nAveI = \Delta Q / \Delta t = nAve. For a fixed current, a smaller area or smaller nn forces a larger drift velocity.

Conductors, semiconductors and insulators

This difference in nn explains why a semiconductor's resistance falls as it warms (more carriers are released), unlike a metal.

Examples in context

Example 1. Why thin filaments glow. In a filament bulb the wire narrows to a tiny cross-section AA. For the same current, I=nAveI = nAve forces a much larger drift velocity, the electrons collide with the lattice more violently, and the filament heats to incandescence. The conducting parts of the circuit with large AA stay cool.

Example 2. A thermistor in a thermostat. A thermistor is a semiconductor whose carrier density nn rises sharply as it warms. As temperature climbs, nn increases, resistance falls and more current flows, which a control circuit detects to switch off a heater. The whole device works because nn in a semiconductor is strongly temperature-dependent, unlike a metal.

Try this

Q1. A copper wire of cross-sectional area 1.0×106m21.0\times10^{-6}\,\text{m}^2 carries a current of 2.0A2.0\,\text{A}. If n=8.5×1028m3n = 8.5\times10^{28}\,\text{m}^{-3}, find the drift velocity. Take e=1.6×1019Ce = 1.6\times10^{-19}\,\text{C}. [3 marks]

  • Cue. v=InAe=2.08.5×1028×1.0×106×1.6×10191.5×104m s1v = \frac{I}{nAe} = \frac{2.0}{8.5\times10^{28}\times1.0\times10^{-6}\times1.6\times10^{-19}} \approx 1.5\times10^{-4}\,\text{m s}^{-1}.

Q2. Explain, in terms of nn, why a metal conducts much better than a semiconductor. [2 marks]

  • Cue. A metal has a far higher number density of free charge carriers than a semiconductor.

Exam-style practice questions

Practice questions written in the style of WJEC exam questions on this dot point, with worked answer explainers. The year tag is the paper they imitate, not the source.

WJEC 20185 marksA copper wire and a silicon strip carry the same current of 0.50A0.50\,\text{A} and have the same cross-sectional area of 1.0×106m21.0 \times 10^{-6}\,\text{m}^2. For copper n=8.5×1028m3n = 8.5 \times 10^{28}\,\text{m}^{-3} and for silicon n=1.0×1016m3n = 1.0 \times 10^{16}\,\text{m}^{-3}. Calculate the drift velocity in each and comment on the difference. Take e=1.6×1019Ce = 1.6 \times 10^{-19}\,\text{C}.
Show worked answer →

Rearrange I=nAveI = nAve to v=I/(nAe)v = I/(nAe) and substitute for each material.

Copper: v=0.508.5×1028×1.0×106×1.6×1019=3.7×105m s1v = \dfrac{0.50}{8.5 \times 10^{28} \times 1.0 \times 10^{-6} \times 1.6 \times 10^{-19}} = 3.7 \times 10^{-5}\,\text{m s}^{-1}.

Silicon: v=0.501.0×1016×1.0×106×1.6×1019=3.1×105m s1v = \dfrac{0.50}{1.0 \times 10^{16} \times 1.0 \times 10^{-6} \times 1.6 \times 10^{-19}} = 3.1 \times 10^{5}\,\text{m s}^{-1}.

The drift velocity in silicon is about ten orders of magnitude larger because its carrier density is far smaller. For the same current the few carriers in a semiconductor must move enormously faster. Markers reward both substitutions and a comment linking low nn to high drift velocity.

WJEC 20213 marksExplain, in terms of charge carriers, why the resistance of a metal increases with temperature but the resistance of a semiconductor decreases.
Show worked answer →

In a metal the number density of free electrons nn is essentially fixed. Heating makes the lattice ions vibrate more, so the electrons collide with them more often, reducing the drift velocity for a given field and increasing resistance.

In a semiconductor, heating releases many more charge carriers (electrons and holes), so nn rises sharply with temperature. This increase in nn outweighs the extra lattice scattering, so the overall resistance falls.

Markers reward the fixed nn with increased scattering for the metal, and the large rise in nn dominating for the semiconductor.

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